LDO分类 LDO_ORIENTALSEMI

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Company Founded in 2008, the company has a registered capital of RMB 122,574,975. It was listed on the Sci-Tech Innovation Board (STAR Market) of the Shanghai Stock Exchange on February 10, 2022, with the stock code: 688261.

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All products SJ MOSFETs SGT MOSFETs IGBTs Trench MOSFETs Power Module SiC MOSFETs GaN HEMT Power IC LDO OPA DSP

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The company's main products include the GreenMOS series of Super Junction MOSFETs, SFGMOS and FSMOS series of Shielded Gate MOSFETs, TGBT, SuperSi²C MOSFETs, SuperSi MOSFETs and SiC MOSFETs. These products are widely applicable to industrial and automotive-grade application scenarios, represented by new energy vehicle DC charging piles, on-board chargers (OBC), photovoltaic inverters, energy storage systems, 5G base station power supplies, telecom power supplies, data center server power supplies, industrial lighting power supplies, power tools, intelligent robots, unmanned aerial vehicles (UAV) and UPS power supplies. They are also used in consumer electronics applications such as PC power supplies, adapters, TV power boards, fast chargers for mobile phones and electromagnetic heating products.

In order to meet the demand of high efficiency and minification of power supply system, Oriental Semiconductor has launched a new GreenMOS series of high voltage MOSFET, which adopts unique patented device structure and manufacturing process. GreenMOS product has faster switching speed and softer switching curve than conventional MOSFET, which can greatly restrain switch oscillation while obtaining extremely low dynamic loss. It can not only greatly improve system efficiency and reduce heating, but also simplify system EMI design.

Oriental Semiconductor’s SFGMOS Series MOSFET adopts Semi-Floating Gate structure, which combines the advantages of traditional planar structure and SGT structure of power MOSFET, and has the advantages of higher process stability and reliability, faster switching speed, smaller gate charge and higher application efficiency. SFGMOS Series MOSFET products cover the whole series of 20V~200V, which can be widely used in motor driver, synchronous rectification, etc.

Oriental Semiconductor's IGBT chips adopt a unique Trident-Gate Bipolar Transistor (TGBT) device structure to achieve lower on-state voltage drop and reduced switching losses.Multiple series of first and second-generation TGBT products have been successively launched, covering voltage ranges from 600V to 1700V. These products are suitable for applications such as photovoltaic energy storage inversion, DC charging piles, automotive main drive, OBC, and UPS. Additionally, Oriental has developed an ultra-high-speed series TGBT with an operating frequency of 60-100 kHz, which meets the demands of further high-frequency power systems while delivering higher efficiency.

Trench MOSFET: Reliable and Trustworthy Performance Through extensive development，we continuously expand our product portfolio with advanced small signal MOS and power MOS solutions. Our comprehensive product portfolio provides the flexibility needed in today's market, easily choose the product that best suits for you. Our leading technology ensures the highest reliability and performance, while advanced packaging enhances resistance and thermal performance while reducing size and costs.

Advanced power modules, including IGBTs, MOSFETs, SiC, Si/SiC hybrid modules, diodes, SiC diodes, and intelligent power modules. IGBT modules are used in applications such as main drive and DC-AC class solar inverters, energy storage systems, uninterruptible power supplies, and motor drives. MOSFET modules are used in automotive motor drives and on-board charger applications, with voltage ratings of 40 V, 60 V, 80 V, and 650 V, and use super-junction technology and inductive resistors.

Third-generation semiconductor material power devices are one of the important components of high-performance power devices in the future. The R&D team of Oriental has rich experience in wide bandgap semiconductor research and has developed a series of SiC MOSFETs.

Gallium Nitride High Electron Mobility Transistors (GaN HEMT) are increasingly becoming the choice for mainstream markets. For various high-voltage and low-voltage application scenarios, GaN HEMTs offer the fastest switching capabilities (with the highest dv/dt and di/dt) and superior energy efficiency performance. In addition, the self-developed GaN HEMTs by Oriental Semiconductor Co., Ltd. have reduced conduction losses and switching losses through innovative designs, further improving power density.

Targeting core application scenarios including high-end AC-DC, DC-DC industrial power supplies and AI computing power supplies, Oriental Semi continuously iterates and launches dedicated digital power control ICs, which are fully compatible with high-frequency wide-bandgap power devices and high-density power supply architectures. Compared with traditional analog power ICs, dedicated digital control ICs deliver disruptive advantages. They eliminate the pain points of analog solutions, such as parameter calibration relying on resistors and capacitors, cumbersome debugging and rigid design schemes. Key parameters can be digitally configured, allowing flexible tuning of loop compensation, operating topologies, various protection thresholds and light-load energy-saving strategies. Multiple types of power products can be supported without modifying hardware circuits.

To meet diverse power management requirements ranging from portable devices to industrial high-voltage control systems, Oriental Semi Devices has released a full lineup of high-performance LDO products. This portfolio includes ultra-low-power CMOS architecture and high-reliability Bipolar architecture. Adopting advanced bandgap reference and over-current protection technologies, these regulators feature a wider input voltage range and excellent cost performance compared with traditional regulators. The CMOS series achieves a quiescent current as low as 0.2 μA and a power supply rejection ratio (PSRR) up to 90 dB. The Bipolar series supports large output current up to 1.5 A and withstands voltages above 36 V. It maintains high output voltage accuracy while greatly simplifying peripheral circuit design. The product family covers an input voltage range from 5.5 V to 100 V, with multiple current ratings from 100 mA to 1.5 A. A variety of package options are available, including SOT23, SOT89, SOT223 and TO252, to satisfy power supply demands of various complex systems.

To address the stringent requirements of modern electronic systems for low power consumption, high precision and high-speed signal processing, Oriental Semi Devices has launched a full portfolio of high-performance analog signal chain products based on Operational Amplifiers (OPAs). This product lineup consists of four core categories: low-voltage general-purpose op-amps, high-voltage general-purpose op-amps, low-voltage high-speed op-amps and low-voltage comparators. Built on advanced semiconductor processes and optimized internal topologies, these devices feature a wider supply voltage range, extremely low input offset voltage (Vos) and superior power supply rejection ratio (PSRR) compared with conventional counterparts. The low-voltage general-purpose series achieves a quiescent current as low as 50 μA and supports rail-to-rail input and output. The high-speed series delivers a gain bandwidth product up to 250 MHz and a slew rate of 180 V/μs. It maintains ultra-low noise while greatly enhancing the dynamic response of the system.

Our DSP products focus on front-end chip design. We independently own the IP source code for DSP processor cores and all peripheral modules. With years of accumulation, we have built a comprehensive portfolio of design resources including IP cores, design flows, automation scripts and chip architectures, enabling fully independent development of core IP throughout the entire process. Centering on key technologies for DSP chip design, we have filed 11 invention patents (4 granted), 17 software copyrights and 3 integrated circuit layout designs. Our products are now in mass production and serve many well-known domestic enterprises.

Application

Application The products of Oriental Semiconductor cover a wide and specific range of application fields. In automotive electronics, the company has made in-depth deployment in electrification, covering on-board charging, various electronic control systems and thermal management. In the industrial and energy sectors, it provides solutions for battery testing, photovoltaic inversion and industrial power supplies. Meanwhile, its products also serve multiple key industries including consumer electronics (e.g., fast charging, televisions), household appliances (e.g., refrigerators, vacuum cleaners), communication facilities (e.g., data center power supplies) and motor drives (e.g., robots, UAVs, forklifts).

Automotive Electronics On-Board Charger (OBC) Automotive DC-DC Converter Automotive Lighting DC-DC Converter Body Domain Controller Electronic Power Steering (EPS) Electronic Water Pumps & Electronic Oil Pumps & Fan Drivers PTC Heater High-Voltage Electric Compressor (HVAC)

Power Supplies for Data Center AIDC Data Center AC-DC Converter DC-DC Converter

Consumer Electronics PD Chargers & Adapters TV Power Supply Printer System Power Tools

Industrial Applications Battery Formation and Testing PV Micro-inverters Residential Energy Storage Inverters String PV Inverters Industrial Power Supplies Charging Pile Power Modules

Household Appliances Vacuum Cleaners Refrigerator Compressors Fan Drivers

Communication Technology Communication Power Supplies DC-DC Converters

Motor Drives Forklift Drivers Aircraft and Drones

Robotics Robotic Vacuum Cleaners Humanoid Robots

Quality Management

Quality Management Date of Certification for ISO 9001 Quality Management System: January 11, 2016. Date of Certification for CNAS 17025 Laboratory Management System: March 3, 2025

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Investor Relations Oriental Semiconductor is committed to establishing an effective communication mechanism with investors. Through transparent, timely and accurate information disclosure and communication, we help investors gain a comprehensive and objective understanding of the company’s strategies, operating status, financial performance and future development prospects. We ensure that all investors receive information of equal quality, build trusting relationships with them, and thereby enable the company’s intrinsic value to be reasonably reflected in the capital market.

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SJ MOSFETs SGT MOSFETs IGBTs Trench MOSFETs Power Module SiC MOSFETs GaN HEMT Power IC LDO OPA DSP

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Part Number	Package Name	Static power (uA)	Vdw (V)	Vout (V)	Accuracy	VDROP@100mA (mV)	Iout (mA)	CL (mA)	PSRR (dB)	With EN pin
OSU78L05TS	SOT89-3	2500	35	5	±5%	1700	100	150	60（20mA@100kHz）	NO
OSU78L33TS-AV	SOT89-3	1700	35	3.3	±2%	1500	150	350	70（10mA@120Hz）	NO
OSU78L12TS-AV	SOT89-3	1700	35	12	±2%	1500	150	350	70（10mA@120Hz）	NO
OSU317DD	TO252	2000	35	ADJ（1.25V）	±2%	NA	1500	NA	NA	NO
OSU317TH	SOT223	2000	35	ADJ（1.25V）	±2%	NA	1500	NA	NA	NO
OSU7805ADTR-G1	TO252	3200	36	5	±4%	200	1000	1500	70（500mA@120Hz）	NO
OSU7812ADTR-G1	TO252	3200	36	12	±4%	200	1000	1500	70（500mA@120Hz）	NO
OSU7815ADTR-G1	TO252	3200	36	15	±4%	200	1000	1500	70（500mA@120Hz）	NO
OSU78M05DD	TO252	2000	40	5	±2%	1500	500	800	55（10mA@120Hz）	NO
OSU78M12DD	TO252	2000	40	12	±2%	1500	500	800	55（10mA@120Hz）	NO
OSU78M12TS	SOT89-3	2000	40	12	±2%	1500	500	800	55（10mA@120Hz）	NO
OSU22L50ATS	SOT89-3	1.6	36	5	±1%	600	200	370	40（1mA@1kHz）	NO
OSU22L33BTE	SOT23-3	1.6	36	3.3	±2%	600	200	370	40（1mA@1kHz）	NO
OSU22L50BTS	SOT89-3	1.6	36	5	±2%	600	200	370	40（1mA@1kHz）	NO
OSU22L33ATS	SOT89-3	1.6	36	3.3	±1%	600	200	370	40（1mA@1kHz）	NO
OSU22L33BTS	SOT89-3	1.6	36	3.3	±2%	600	200	370	40（1mA@1kHz）	NO
OSU24L12ATS-C	SOT89-3	2.8	40	12	±1%	330	300	450	53（20mA@1kHz）	NO
OSU24L12BTS-C	SOT89-3	2.8	40	12	±2%	330	300	450	53（20mA@1kHz）	NO
OSU2433ATE	SOT23-3	2.8	45	3.3	±1%	320	350	700	83（10mA@1kHz）	NO
OSU2450ATS	SOT89-3	2.8	45	5	±1%	320	350	700	83（10mA@1kHz）	NO
OSU2433BTE	SOT23-3	2.8	45	3.3	±2%	320	350	700	83（10mA@1kHz）	NO
OSU2450BTS	SOT89-3	2.8	45	5	±2%	320	350	700	83（10mA@1kHz）	NO
OSU2633ATE	SOT23-3	2.1	60	3.3	±1%	650	150	250	70（10mA@1kHz）	NO
OSU2633BTE	SOT23-3	2.1	60	3.3	±2%	650	150	250	70（10mA@1kHz）	NO
OSU2650ATS-DAF	SOT89-3	2.1	60	5	±1%	650	150	250	70（10mA@1kHz）	NO
OSU2650BTS-DAF	SOT89-3	2.1	60	5	±2%	650	150	250	70（10mA@1kHz）	NO
OSU2A33ATS-C	SOT89-3	4.5	100	3.3	±1%	830	100	240	57（10mA@1kHz）	NO
OSU2A33BTS-C	SOT89-3	4.5	100	3.3	±2%	830	100	240	57（10mA@1kHz）	NO
OSU1117BTH-33	SOT223	23	18	3.3	±2%	1100	1000	1500	75（10mA@1kHz）	NO
OSU1117BTH-50	SOT223	23	18	5	±2%	1100	1000	1500	75（10mA@1kHz）	NO
OSU1117BTH-ADJ	SOT223	23	18	ADJ	±2%	1100	1000	1500	75（10mA@1kHz）	NO
OSU26206ATF-33	SOT23-3	6	5.5	3.3	±1%	180	300	530	78（100mA@1kHz）	NO
OSU26206BTF-33	SOT23-3	6	5.5	3.3	±2%	180	300	530	78（100mA@1kHz）	NO
OSU29193ATG-28	SOT23-5	50	6	2.8	±1%	110	500	500	82（20mA@1kHz）	YES
OSU20B33ATE	SOT23-3	0.8	6	3.3	±1%	130	500	800	60（100mA@1kHz）	NO
OSU20A33ATS	SOT89-3	0.2	6	3.3	±1%	130	500	500	82（20mA@1kHz）	NO
OSU29193BTG-28	SOT23-5	50	6	2.8	±2%	110	500	500	82（20mA@1kHz）	YES
OSU20B33BTE	SOT23-3	0.8	6	3.3	±2%	130	500	800	60（100mA@1kHz）	NO
OSU20A33BTS	SOT89-3	0.2	6	3.3	±2%	130	500	500	82（20mA@1kHz）	NO
OSU2133ATG	SOT23-5	1	15	3.3	±1%	120	500	900	80（10mA@1kHz）	YES
OSU2150ATS	SOT89-3	1	15	5	±1%	120	500	900	80（10mA@1kHz）	NO
OSU2133BTG	SOT23-5	1	15	3.3	±2%	120	500	900	80（10mA@1kHz）	YES
OSU2150BTS	SOT89-3	1	15	5	±2%	120	500	900	80（10mA@1kHz）	NO
OSU21A33ATG	SOT23-5	2.3	18	3.3	±1%	42	1000	1500	80（10mA@1kHz）	YES
OSU21A50ATG	SOT23-5	2.3	18	5	±1%	42	1000	1500	80（10mA@1kHz）	YES
OSU29016ATG	SOT23-5	0.7	18	3.3	±1%	100	600	1000	85（10mA@1kHz）	YES
OSU22211ATG-33	SOT23-5	4	24	3.3	±0.8%	80	200	400	90（10mA@1kHz）	YES
OSU22411BTG-ADJ	SOT23-5	5	24	FB=0.6	±2%	100	800	1100	65（20mA@1kHz）	YES
OSU2233ATS	SOT89-3	3	30	3.3	±1%	700	200	350	75（10mA@1kHz）	NO
OSU2233BTS	SOT89-3	3	30	3.3	±2%	700	200	350	75（10mA@1kHz）	NO
OSU22L33ATE	SOT23-3	1.6	36	3.3	±1%	600	200	370	40（1mA@1kHz）	NO

比特28

All products

SJ MOSFETs

SGT MOSFETs

IGBTs

Trench MOSFETs

Power Module

SiC MOSFETs

Third-generation semiconductor material power devices are one of the important components of high-performance power devices in the future. The R&D team of Oriental has rich experience in wide bandgap semiconductor research and has developed a series of SiC MOSFETs.

GaN HEMT

Power IC

LDO

OPA

DSP

LDO

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